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| TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RJC 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.0 10 30 6.0 140 -65 to +200 Max. 1.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 mW/0C for TA > +250C 2) Derate linearly 800 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = 1.5 Vdc VCE = 135 Vdc, VBE = 1.5 Vdc 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 V(BR)CEO 90 120 110 140 120 150 10 12 10 Vdc V(BR)CER Vdc V(BR)CEX ICEO Vdc mAdc mAdc 2N5671 2N5672 ICEX 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5671, 2N5672 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS (con't) Collector-Base Cutoff Current VCB = 120 Vdc VCB = 150 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N5671 2N5672 ICBO IEBO (3) 25 25 10 mAdc mAdc ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 15 Adc, VCE = 2.0 Vdc IC = 20 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 15 Adc, IB = 1.2 Adc IC = 30 Adc, IB = 6.0Adc Base-Emitter Saturation Voltage IC = 15 Adc, IB = 1.2 Adc hFE 20 20 100 VCE(sat) VBE(sat) 0.75 5.0 1.5 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 10 40 900 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc Turn-Off Time VCC = 30 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc t on 0.5 1.5 s s t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test VCE = 24 Vdc, IC = 5.8 Adc Test 2 VCE = 45 Vdc, IC = 0.9 Adc Test 3 VCE = 4.67 Vdc, IC = 30 Adc Test 4 VCE = 90 Vdc, IC = 0.19 Adc 2N5671 Test 5 VCE = 120 Vdc, IC = 0.11 Adc 2N5672 (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
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